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參數(shù)資料
| 型號： | SIHF830-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 201K |
| 代理商： | SIHF830-E3 |
www.vishay.com
4
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF830, SiHF830
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
91063_05
1500
1250
1000
750
0
250
500
10
0
10
1
C
V
DS,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91063_06
Q
G
, Total Gate Charge (nC)
V
G
,
20
16
12
8
0
4
0
8
40
32
24
16
I
D
= 3.1 A
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
91063_07
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
S
,
0.4
1.2
1.0
0.8
0.6
25
°
C
150
°
C
V
GS
= 0 V
91063_08
10
μs
100
μs
1
ms
10
ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
T
C
= 25
°
C
T
= 150
°
C
Single Pulse
5
10
10
-2
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
2
5
1
2
2
5
10
2
2
5
10
3
2
5
10
4
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