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參數(shù)資料
| 型號： | SIHF830-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 201K |
| 代理商： | SIHF830-E3 |
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF830, SiHF830
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91063_01
10
1
10
0
10
-1
10
0
10
1
V
DS
, Drain-to-Source Voltage (V)
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 μs Pulse Width
T
C
=
25 °C
I
D
,
4.5 V
91063_02
10
1
10
0
10
-1
10
0
10
1
V
DS,
Drain-to-Source Voltage (V)
I
D
,
4.5 V
Bottom
Top
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 μs Pulse Width
T
C
=
150 °C
20 μs Pulse Width
V
DS
=
50 V
91063_03
10
1
10
0
10
-1
I
D
,
V
GS,
Gate-to-Source Voltage (V)
5
6
7
8
9
10
4
25
°
C
150
°
C
I
D
= 3.1 A
V
GS
= 10 V
91063_04
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20
0
20
40
60 80 100 120 140 160
T
J,
Junction Temperature (°C)
R
D
,
(
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