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參數(shù)資料
| 型號： | SIHF640L-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | SIHF640L-E3 |
www.vishay.com
6
Document Number: 91037
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01
Ω
t
p
D.U.T.
L
V
DS
+
-V
DD
Driver
15 V
20 V
I
AS
V
DS
t
p
1400
0
400
600
800
1000
1200
25
150
125
100
75
50
Starting T
J
, Junction Temperature (°C)
E
A
,
Bottom
Top
I
D
8.0 A
11.0 A
18.0 A
V
DD
= 50 V
91037_12c
200
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 μF
0.2 μF
50 k
Ω
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
相關PDF資料 |
PDF描述 |
|---|---|
| SIHF640STR-E3 | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| SIHF730S-E3 | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| SIHF830-E3 | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| SIHFP260-E3 | 46 A, 200 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| SIHFR120T | 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHF640S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640S-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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