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參數(shù)資料
| 型號： | SIHF640L-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, I2PAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | SIHF640L-E3 |
www.vishay.com
2
Document Number: 91037
S11-1047-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. Uses IRF640/SiHF640 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)
a
Maximum Junction-to-Case (Drain)
SYMBOL
TYP.
MAX.
UNIT
R
thJA
-
40
°C/W
R
thJC
-
1.0
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
c
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
V
DS
= 50 V, I
D
= 11 A
d
200
-
-
V
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
V
DS
/T
J
V
GS(th)
I
GSS
-
0.29
-
V/°C
2.0
-
4.0
V
Gate-Source Leakage
-
-
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
-
-
25
μA
-
-
250
Drain-Source On-State Resistance
R
DS(on)
g
fs
I
D
= 11 A
b
-
-
0.18
Forward Transconductance
6.7
-
-
S
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V,
V
= 25 V,
f = 1.0 MHz, see fig. 5
d
-
1300
-
pF
Output Capacitance
-
430
-
Reverse Transfer Capacitance
-
130
-
Total Gate Charge
V
GS
= 10 V
I
D
= 18 A, V
DS
= 160 V,
see fig. 6 and 13
b, c
-
-
70
nC
Gate-Source Charge
-
-
13
Gate-Drain Charge
-
-
39
Turn-On Delay Time
V
DD
= 100 V, I
D
= 18 A,
R
g
= 9.1
, R
D
= 5.4
, see fig. 10
b, c
-
14
-
ns
Rise Time
-
51
-
Turn-Off Delay Time
-
45
-
Fall Time
-
36
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
-
18
A
Pulsed Diode Forward Current
a
I
SM
-
-
72
Body Diode Voltage
V
SD
t
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= 18 A, V
GS
= 0 V
b
-
-
2.0
V
Body Diode Reverse Recovery Time
T
J
= 25 °C, I
F
= 18 A, dI/dt = 100 A/μs
b, c
-
300
610
ns
Body Diode Reverse Recovery Charge
-
3.4
7.1
μC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
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PDF描述 |
|---|---|
| SIHF640STR-E3 | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHF640S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640S-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STL | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
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