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| 型號： | SIHF730S-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SMD-220, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 165K |
| 代理商： | SIHF730S-E3 |
Document Number: 91048
S11-1048-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Power MOSFET
IRF730S, SiHF730S
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
low
on-resistance
and
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
= 25 °C, L = 16 mH, R
= 25
, I
AS
= 5.5 A (see fig. 12).
c. I
5.5 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
400
V
GS
= 10 V
1.0
38
5.7
22
Single
N-Channel MOSFET
G
D
S
K
D
2
PAK (TO-263)
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
2
PAK (TO-263)
SiHF730S-GE3
IRF730SPbF
SiHF730S-E3
SiHF730S-E3
D
2
PAK (TO-263)
SiHF730STRL-GE3
a
IRF730STRLPbF
a
SiHF730STL-E3
a
SiHF730STL-E3
a
D
2
PAK (TO-263)
SiHF730STRR-GE3
a
-
-
-
Lead (Pb)-free
SYMBOL
V
DS
V
GS
LIMIT
400
± 20
5.5
3.5
22
0.59
0.025
290
5.5
7.4
74
3.1
4.0
UNIT
V
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
DM
W/°C
E
AS
I
AR
E
AR
mJ
A
mJ
T
C
= 25 °C
T
A
= 25 °C
P
D
W
dV/dt
T
J
, T
stg
V/ns
- 55 to + 150
300
d
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
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