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| 型號： | SIHF730S-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SMD-220, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 165K |
| 代理商： | SIHF730S-E3 |
www.vishay.com
4
Document Number: 91048
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF730S, SiHF730S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1500
1200
900
0
300
600
10
0
10
1
C
V
DS,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91048_05
Q
G
, Total Gate Charge (nC)
V
G
,
20
16
12
8
0
4
0
50
30
20
10
V
DD
= 80 V
V
DD
= 200 V
For test circuit
see figure 13
V
DD
= 320 V
91048_06
I
D
= 3.5 A
40
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
S
,
0.6
1.0
0.9
0.8
0.7
25
°
C
150
°
C
V
GS
= 0 V
91048_07
1.2
1.1
10
μs
100
μs
1
ms
10
ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
T
C
= 25
°
C
T
= 150
°
C
Single Pulse
10
2
0.1
2
5
0.1
1
2
5
10
2
5
2
5
1
2
5
10
2
5
10
2
2
5
10
3
2
5
10
4
91048_08
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