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參數(shù)資料
| 型號(hào)： | SIHF640L-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | ROHS COMPLIANT, TO-262, I2PAK-3 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 170K |
| 代理商： | SIHF640L-E3 |
Document Number: 91037
S11-1047-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Power MOSFET
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Low-Profile Through-Hole
Available in Tape and Reel
Dynamic dV/dt Rating
150 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized
device
design,
cost-effectiveness.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRF640L/SiHF640L) is available for
low-profile applications.
low
on-resistance
and
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.7 mH, R
g
= 25
, I
AS
= 18 A (see fig. 12).
c. I
SD
18 A, dI/dt
150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
200
V
GS
= 10 V
0.18
70
13
39
Single
N-Channel MOSFET
G
D
S
D
2
PAK
(TO-263)
G
D
S
I
2
PAK
(TO-262)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
2
PAK (TO-263)
SiHF640S-GE3
IRF640SPbF
SiHF640S-E3
D
2
PAK (TO-263)
SiHF640STRL-GE3
a
IRF640STRLPbF
a
SiHF6340STL-E3
a
D
2
PAK (TO-263)
SiHF640STRR-GE3
a
IRF640STRRPbF
a
SiHF640STR-E3
a
I
2
PAK (TO-262)
SiHF640L-GE3
IRF640LPbF
SiHF640L-E3
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DS
V
GS
LIMIT
200
± 20
18
11
72
1.0
580
18
13
3.1
130
5.0
UNIT
V
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
A
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetiitive Avalanche Energy
a
I
DM
W/°C
mJ
A
mJ
E
AS
I
AR
E
AR
Maximum Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
P
D
W
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
dV/dt
T
J
, T
stg
V/ns
- 55 to + 150
300
d
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIHF640S | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640S-E3 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STL | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
| SIHF640STR-E3 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Power MOSFET |
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