參數(shù)資料
型號: SI3230PPQX-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 15/108頁
文件大?。?/td> 0K
描述: BOARD EVAL W/DISCRETE INTERFACE
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3230
已供物品: 板,CD
Si3230
14
Preliminary Rev. 0.96
Not
Recommended
fo
r N
ew
D
esi
gn
s
Figure 5. Si3230M MOSFET/Transformer DC-DC Converter Circuit
Table 13. Si3230M MOSFET/Transformer DC-DC Converter Component Values
Component(s)
Value
Supplier
C9
10 F, 100 V, Electrolytic, ±20%
Panasonic
C14*
0.1 F, X7R, ±20%
Murata, Johanson, Novacap, Venkel
C25*
10 F, Electrolytic, ±20%
Panasonic
C27
470 pF, 100 V, X7R, ±20%
Murata, Johanson, Novacap, Venkel
R17
200 k
, 1/10 W, ±5%
R18
1/4 W, ±5% (See AN45 or Table 21 for value selection)
R19,R20
1/10 W, ±1% (See AN45 or Table 21
for value selection)
R22
22
, 1/10 W, ±5%
F1
Fuse
Belfuse SSQ Series
D1
Ultra Fast Recovery 200 V, 1A Rectifier
General Semi ES1D; Central Semi
CMR1U-02
T1
Power Transformer
Coiltronic CTX01-15275;
Datatronics SM76315;
Midcom 31353R-02
M1
100 V, Logic Level Input MOSFET
Intl Rect. IRLL014N; Intersil
HUF76609D3S; ST Micro
STD5NE10L, STN2NE10L
*Note: Voltage rating of this device must be greater than VDC.
D1
ES1D
C9
10F
C25
2
10F
R19
1
R20
1
R18
1
R22
22
R17
200k
F1
SDCH
SDCL
DCFF
DCDRV
GND
VBAT
C14
2
0.1F
VDC
C27
470pF
M1
IRLL014N
T1
1
NC
Note 1
1
2
3
4
10
Notes:
1. Values and configurations for these components can be derived from
Table 18 or from App Note 45.
2. Voltage rating for C14 and C25 must be greater than VDC.
S
i3230
M
6
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