參數(shù)資料
型號: SI1016X
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述: P通道20V(D-S)MOSFET 低閾值
文件頁數(shù): 5/7頁
文件大?。?/td> 53K
代理商: SI1016X
Si1016X
Vishay Siliconix
New Product
Document Number: 71168
S-03104
Rev. A, 08-Feb-01
www.vishay.com
5
0
200
400
600
800
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 3 V
T
J
=
55 C
125 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
1.8 V
2.5 V
r
D
)
0
20
40
60
80
100
120
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.8
1.6
2.4
3.2
4.0
0
200
400
600
800
1000
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 250 mA
I
D
Drain Current (mA)
V
GS
= 4.5 V
I
D
V
GS
= 1.8 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
I
D
= 150 mA
V
= 0 V
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1016X_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20-V (D-S) MOSFET
SI1016X-T1 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI1016X-T1-GE3 功能描述:MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube