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參數(shù)資料
| 型號： | SI1022R |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | SI1022R |
Si1022R
Vishay Siliconix
New Product
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
V
(BR)DSS(min)
(V)
r
DS(on)
( )
V
GS(th)
(V)
I
D
(mA)
60
1.25 @ V
GS
= 10 V
1 to 2.5
330
Low On-Resistance: 1.25
Low Threshold: 2.5 V
Low Input Capacitance: 30 pF
Fast Switching Speed: 25 ns
Low Input and Output Leakage
Miniature Package
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Small Board Area
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Marking Code: E
SC-75A
(SOT-416)
1
2
3
G
S
D
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
330
Continuous Drain Current
a
T
A
= 85 C
I
D
240
mA
Pulsed Drain Current
a
I
DM
650
T
A
= 25 C
250
Power Dissipation
a
T
A
= 85 C
P
D
130
mW
Thermal Resistance, Maximum Junction-to-Ambient
a
R
thJA
500
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
c.
Surface Mounted on FR4 Board, Power Applied for t
10 sec.
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PDF描述 |
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| SI1023X | Dual P-Channel 20-V (D-S) MOSFET |
| SI1024X | Dual N-Channel 20-V (D-S) MOSFET |
| SI1025X | P-Channel 60-V (D-S) MOSFET |
| SI1029X | Complementary N- and P-Channel 60-V (D-S) MOSFET |
| SI1031R | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1022R | 制造商:Vishay Siliconix 功能描述:MOSFET N SC-75A |
| SI1022R_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI1022R_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| SI1022R-T1 | 功能描述:MOSFET 60V 0.33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1022R-T1-E3 | 功能描述:MOSFET 60V 0.33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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