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參數(shù)資料
| 型號(hào)： | SI1025X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 47K |
| 代理商： | SI1025X |
Si1025X
Vishay Siliconix
New Product
Document Number: 71433
S-03518—Rev. A, 23-Apr-01
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
V
(BR)DSS(min)
(V)
r
DS(on)
( )
V
GS(th)
(V)
I
D
(mA)
–60
4 @ V
GS
= –10 V
–1 to –3.0
–500
High-Side Switching
Low On-Resistance: 4
Low Threshold: –2 V (typ)
Fast Switching Speed: 20 ns (typ)
Low Input Capacitance: 23 pF (typ)
Miniature Package
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Small Board Area
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
Marking Code: D
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SC-89
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–60
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
–200
–190
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
–145
–135
Pulsed Drain Current
b
I
DM
–650
mA
Continuous Source Current (diode conduction)
a
I
S
–450
–380
T
A
= 25 C
280
250
Maximum Power Dissipation
a
T
A
= 85 C
P
D
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1025X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI1025X-T1 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1025X-T1-E3 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1025X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI1025X-T1-GE3 | 功能描述:MOSFET 60V 500mA 280mW 4.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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