- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365544 > SI1025X (Vishay Intertechnology,Inc.) P-Channel 60-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SI1025X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | SI1025X |
Si1025X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71433
S-03518
—
Rev. A, 23-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
10 A
–
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
0.25 mA
–
1
–
3.0
V
V
DS
= 0 V, V
GS
=
10 V
200
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
5 V
100
V
DS
=
–
50 V, V
GS
= 0 V
–
25
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
50 V, V
GS
= 0 V, T
J
= 85 C
–
250
V
DS
=
–
10 V, V
GS
=
–
4.5 V
–
50
On-State Drain Current
a
I
D
(on)
V
DS
=
–
10 V, V
GS
=
–
10 V
–
600
mA
V
GS
=
–
4.5 V, I
D
=
–
25 mA
8
Drain-Source On-Resistance
a
r
DS(on)
V
GS
=
–
10 V, I
D
=
–
500 mA
4
V
GS
=
–
10 V, I
D
=
–
500 mA, T
J
= 125 C
6
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
100 mA
100
mS
Diode Forward Voltage
a
V
SD
I
S
=
–
200 mA, V
GS
= 0 V
–
1.4
V
Dynamic
b
Total Gate Charge
Q
g
1.7
Gate-Source Charge
Q
gs
V
DS
=
–
30 V, V
GS
=
–
15 V, I
D
–
500 mA
0.26
nC
Gate-Drain Charge
Q
gd
0.46
Input Capacitance
C
iss
23
Output Capacitance
C
oss
V
=
–
25 V, V
= 0 V, f = 1 MHz
DS
GS
10
pF
Reverse Transfer Capacitance
C
rss
5
Switching
b, c
Turn-On Time
t
ON
V
DD
=
–
25 V, R
L
= 150
I
D
–
165 mA, V
GEN
=
–
10 V
R
G
= 10
20
Turn-Off Time
t
OFF
35
ns
Notes
a.
b.
c.
Pulse test: PW
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
300 ms duty cycle
2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI1029X | Complementary N- and P-Channel 60-V (D-S) MOSFET |
| SI1031R | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| Si1031X | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI1032R | N-Channel 20-V (D-S) MOSFET |
| SI1032R-T1 | N-Channel 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1025X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
| SI1025X-T1 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1025X-T1-E3 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1025X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI1025X-T1-GE3 | 功能描述:MOSFET 60V 500mA 280mW 4.0ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。