參數(shù)資料
型號： SI1031R
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述： P通道20 - V（下局副局長）MOSFET的低閾值
文件頁數(shù)： 1/4頁
文件大?。?/td> 42K
代理商： SI1031R
1.5V Rated
Si1031R/X
Vishay Siliconix
New Product
Document Number: 71171
S-31507—Rev. B, 14-Jul-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
8 @ V
GS
= -4.5 V
-150
-20
12 @ V
GS
= -2.5 V
-125
15 @ V
GS
= -1.8 V
-100
20 @ V
GS
= -1.5 V
-30
FEATURES
BENEFITS
APPLICATIONS
High-Side Switching
Low On-Resistance: 8
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 45 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
SC-75A (SOT- 416): Si1031R
SC-89 (SOT- 490): Si1031X
Top View
2
1
S
D
G
3
Marking Code: H
SC-75A or SC-89
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Si1031R
Si1031X
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
6
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-150
-140
-165
-155
T
A
= 85 C
-110
-100
-150
-125
mA
Pulsed Drain Current
a
I
DM
-500
-600
Continuous Source Current (diode conduction)
a
I
S
-250
-200
-340
-240
Maximum Power Dissipation
a
T
A
= 25 C
P
D
280
250
340
300
mW
T
A
= 85 C
145
130
170
150
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
Surface Mounted on FR4 Board.
相關(guān)PDF資料
PDF描述
Si1031X P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI1032R N-Channel 20-V (D-S) MOSFET
SI1032R-T1 N-Channel 20-V (D-S) MOSFET
SI1032X-T1 N-Channel 20-V (D-S) MOSFET
SI1034X N-Channel 20-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1031R 制造商:Vishay Siliconix 功能描述:MOSFET P SC-75A
SI1031R_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
SI1031R-T1 功能描述:MOSFET 20V 0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1031R-T1-E3 功能描述:MOSFET 20V 0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1031R-T1-GE3 功能描述:MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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