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參數(shù)資料
| 型號(hào)： | SI1031R |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長(zhǎng)）MOSFET的低閾值 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | SI1031R |
Si1031R/X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71171
S-31507—Rev. B, 14-Jul-03
SPECIFICATIONS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.40
-1.20
V
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
2.8
V
0.5
1
A
V
DS
= 0 V, V
GS
=
4.5
V
1
2
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
-1
-500
nA
V
DS
= -16 V, V
GS
= 0 V, T
J
= 85 C
-10
A
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-200
mA
V
GS
= -4.5 V, I
D
= -150 mA
8
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -125 m A
12
V
GS
= -1.8 V, I
D
= -100 m A
15
V
GS
= -1.5 V, I
D
= -30 m A
20
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -150 mA
0.4
S
Diode Forward Voltage
a
V
SD
I
S
= -150 mA, V
GS
= 0 V
-1.2
V
Dynamic
b
Total Gate Charge
Q
g
1500
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -4.5 V, I
D
= -150 mA
150
pC
Gate-Drain Charge
Q
gd
450
Turn-On Delay Time
t
d(on)
55
Rise Time
t
r
V
= -10 V, R
= 65
-150 mA, V
GEN
= -4.5 V, R
G
= 10
30
ns
Turn-Off Delay Time
t
d(off)
I
D
60
Fall Time
t
f
30
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS NOTED)
0
100
200
300
400
500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
V
GS
= 5 thru 2.5 V
T
J
= -55 C
125 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.8 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1031R | 制造商:Vishay Siliconix 功能描述:MOSFET P SC-75A |
| SI1031R_08 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI1031R-T1 | 功能描述:MOSFET 20V 0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1031R-T1-E3 | 功能描述:MOSFET 20V 0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1031R-T1-GE3 | 功能描述:MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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