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參數(shù)資料
| 型號(hào)： | SI1032X-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI1032X-T1 |
1.5-V Rated
Si1032R/X
Vishay Siliconix
Document Number: 71172
S-40574—Rev. C, 29-Mar-04
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
5 @ V
GS
= 4.5 V
200
20
7 @ V
GS
= 2.5 V
9 @ V
GS
= 1.8 V
10 @ V
GS
= 1.5 V
175
150
50
FEATURES
BENEFITS
APPLICATIONS
Low-Side Switching
Low On-Resistance: 5
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Ordering Information:
SC-75A (SOT-416): Si1032R-T1
SC-75A (SOT-416): Si1032R-T1—E3 (Lead Free)
SC-89 (SOT-490): Si1032X-T1
SC-89 (SOT-490): Si1032X-T1—E3 (Lead Free)
Top View
2
1
S
D
G
3
Marking Code: G
SC-75A or SC-89
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Si1032R
Si1032X
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
6
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
200
140
210
200
T
A
= 85 C
110
100
150
140
mA
Pulsed Drain Current
a
I
DM
500
600
Continuous Source Current (diode conduction)
a
I
S
250
200
300
240
for SC 75
Maximum Power Dissipation
a
for SC-75
T
A
= 25 C
P
D
280
250
340
300
mW
T
A
= 85 C
145
130
170
150
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
c.
Surface Mounted on FR4 Board.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI1034X | N-Channel 20-V (D-S) MOSFET |
| SI1035X | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| SI1037X | P-Channel 1.8-V (G-S) MOSFET |
| SI1039X | P-Channel 1.8-V (G-S) MOSFET |
| Si1039X-T1 | P-Channel 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1032X-T1-E3 | 功能描述:MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1032X-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:20V (D-S) N-CH MOSFET W/ESD PROTECT |
| SI1032X-T1-GE3 | 功能描述:MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si1033-A-GM | 功能描述:射頻微控制器 - MCU 16KB 4KB RAM PRGRM XCVR, DC-DC RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:Si100x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LGA-42 安裝風(fēng)格:SMD/SMT 封裝:Tube |
| Si1033-A-GMR | 功能描述:射頻微控制器 - MCU 16kB, 4kB RAM, +20dBm, LCD, XCVR RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:Si100x 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:24 MHz 程序存儲(chǔ)器大小:64 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LGA-42 安裝風(fēng)格:SMD/SMT 封裝:Tube |
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