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參數(shù)資料
| 型號(hào)： | SI1035X |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | SI1035X |
Si1035X
Vishay Siliconix
New Product
Document Number: 71426
S-03201—Rev. A, 12-Mar-01
www.vishay.com
1
Complementary N- and P-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
5 @ V
GS
= 4.5 V
7 @ V
GS
= 2.5 V
9 @ V
GS
= 1.8 V
10 @ V
GS
= 1.5 V
8 @ V
GS
= –4.5 V
12 @ V
GS
= –2.5 V
15 @ V
GS
= –1.8 V
20 @ V
GS
= –1.5 V
200
175
N-Channel
20
150
50
–150
–125
P-Channel
–20
–100
–30
Very Small Footprint
High-Side Switching
Low On-Resistance:
N-Channel, 5
P-Channel, 8
Low Threshold:
Fast Switching Speed: 45 ns (typ)
1.5-V Operation
Gate-Source ESD Protection
0.9 V (typ)
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Marking Code: M
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SC-89
!"#
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
–20
Gate-Source Voltage
5
V
T
A
= 25 C
T
A
= 85 C
190
180
–155
–145
Continuous Drain Current
(T
J
= 150 C)
a
I
D
140
130
–110
–105
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
650
–650
mA
450
380
–450
–380
T
A
= 25 C
T
A
= 85 C
280
250
280
250
Maximum Power Dissipation
a
P
D
145
130
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
ESD
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1035X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20-V (D-S) MOSFET |
| SI1035X_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20 V (D-S) MOSFET |
| SI1035X-T1 | 功能描述:MOSFET 20V 0.2/0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1035X-T1-E3 | 功能描述:MOSFET 20V 0.2/0.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1035X-T1-GE3 | 功能描述:MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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