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參數(shù)資料
| 型號： | SI1029X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Complementary N- and P-Channel 60-V (D-S) MOSFET |
| 中文描述： | 補充N和P溝道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 61K |
| 代理商： | SI1029X |
Si1029X
Vishay Siliconix
New Product
Document Number: 71435
S-03518—Rev. A, 11-Apr-01
www.vishay.com
1
Complementary N- and P-Channel 60-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
1.40 @ V
GS
= 10 V
3 @ V
GS
= 4.5 V
4 @ V
GS
= –10 V
8 @ V
GS
= –4.5 V
500
N-Channel
60
200
–500
P-Channel
–60
–25
Very Small Footprint
High-Side Switching
Low On-Resistance:
N-Channel, 1.40
P-Channel, 4
Low Threshold:
Fast Switching Speed: 15 ns (typ)
Gate-Source ESD Protection
2 V (typ)
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Marking Code: H
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SC-89
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
60
–60
Gate-Source Voltage
20
V
T
A
= 25 C
T
A
= 85 C
320
305
–200
–190
Continuous Drain Current
(T
J
= 150 C)
a
I
D
230
220
–145
–135
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
650
–650
mA
450
380
–450
–380
T
A
= 25 C
T
A
= 85 C
280
250
280
250
Maximum Power Dissipation
a
P
D
145
130
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
ESD
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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| SI1032R-T1 | N-Channel 20-V (D-S) MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1029X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 60-V (D-S) MOSFET |
| SI1029X_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 60 V (D-S) MOSFET |
| SI1029X-T1 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1029X-T1-E3 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1029X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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