參數(shù)資料
型號(hào)： SI1029X
廠(chǎng)商： Vishay Intertechnology,Inc.
英文描述： Complementary N- and P-Channel 60-V (D-S) MOSFET
中文描述： 補(bǔ)充N(xiāo)和P溝道60 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 61K
代理商： SI1029X
Si1029X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71435
S-03518
—
Rev. A, 11-Apr-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
GS
= 0 V, I
D
= 10 A
V
GS
= 0 V, I
D
=
–
10 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= V
GS
, I
D
=
–
250 A
N-Ch
60
Drain-Source Breakdown Voltage
V
(BR)DSS
P-Ch
–
60
N-Ch
1
2.5
V
Gate Threshold Voltage
V
GS(th)
P-Ch
–
1.0
–
3.0
N-Ch
50
V
DS
= 0 V, V
GS
=
5 V
P-Ch
100
Gate-Body Leakage
I
GSS
N-Ch
150
V
DS
= 0 V, V
GS
=
10 V
P-Ch
200
V
DS
= 50 V, V
GS
= 0 V
V
DS
=
–
50 V, V
GS
= 0 V
V
DS
= 50 V, V
GS
= 0 V, T
J
= 85 C
V
DS
=
–
50 V, V
GS
= 0 V, T
J
= 85 C
V
DS
= 10 V, V
GS
= 4.5 V
V
DS
=
–
10 V, V
GS
=
–
4.5 V
V
DS
= 7.5 V, V
GS
=
–
4.5 V
V
DS
=
–
10 V, V
GS
=
–
10 V
V
GS
= 4.5 V, I
D
= 200 mA
V
GS
=
–
4.5 V, I
D
=
–
25 mA
V
GS
= 10 V, I
D
= 500 mA
V
GS
=
–
10 V, I
D
=
–
500 mA
V
GS
= 10 V, I
D
= 500 mA, T
J
= 125 C
V
GS
=
–
10 V, I
D
=
–
500 mA, T
J
= 125 C
V
DS
= 10 V, I
D
= 200 mA
V
DS
=
–
10 V, I
D
=
–
100 mA
I
S
= 200 mA, V
GS
= 0 V
I
S
=
–
200 mA, V
GS
= 0 V
N-Ch
10
nA
P-Ch
–
25
Zero Gate Voltage Drain Current
I
DSS
N-Ch
100
P-Ch
–
250
N-Ch
500
P-Ch
–
50
On-State Drain Current
a
I
D(on)
N-Ch
800
mA
P-Ch
–
600
N-Ch
3
P-Ch
8
N-Ch
1.40
Drain-Source On-State Resistance
a
r
DS(on)
P-Ch
4
N-Ch
2.50
P-Ch
6
N-Ch
200
Forward Transconductance
a
g
fs
P-Ch
100
mS
N-Ch
1.4
Diode Forward Voltage
a
V
SD
P-Ch
–
1.4
V
Dynamic
b
N-Ch
750
Total Gate Charge
Q
g
N-Channel
P-Ch
1700
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 250 mA
N-Ch
75
Gate-Source Charge
Q
gs
P-Channel
P-Ch
260
pC
V
DS
=
–
30 V,
V
GS
=
–
15 V, I
D
=
–
500 mA
N-Ch
225
Gate-Drain Charge
Q
gd
P-Ch
460
N-Ch
30
Input Capacitance
C
iss
N-Channel
P-Ch
23
V
DS
= 25 V,
V
GS
= 0 V, f = 1 MHz
N-Ch
6
Output Capacitance
C
oss
P-Channel
P-Ch
10
pF
V
DS
=
–
25 V,
V
GS
= 0 V, f = 1 MHz
N-Ch
3
Reverse Transfer Capacitance
C
rss
P-Ch
5
N-Channel
N-Ch
15
Turn-On Time
c
t
ON
V
= 30 V, R
= 150
200 mA, V
GEN
= 10 V, R
G
= 10
I
D
P-Ch
20
P-Channel
N-Ch
20
ns
Turn-Off Time
c
t
OFF
V
=
–
25 V, R
L
= 150
–
165 mA, V
GEN
=
–
10 V, R
G
= 10
I
D
P-Ch
35
Notes
a.
b.
c.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Switching time is essentially independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1029X_08 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Complementary N- and P-Channel 60-V (D-S) MOSFET
SI1029X_10 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Complementary N- and P-Channel 60 V (D-S) MOSFET
SI1029X-T1 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1029X-T1-E3 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1029X-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
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