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參數(shù)資料
| 型號(hào)： | SI1023X |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual P-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙P溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | SI1023X |
Si1023X
Vishay Siliconix
New Product
Document Number: 71169
S-03104—Rev. A, 08-Feb-01
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
1.2 @ V
GS
= –4.5 V
–350
–20
1.6 @ V
GS
= –2.5 V
–300
2.7 @ V
GS
= –1.8 V
–150
Very Small Footprint
High-Side Switching
Low On-Resistance: 1.2
Low Threshold: 0.8 V (typ)
Fast Swtiching Speed: 14 ns
1.8-V Operation
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Marking Code: B
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SOT-563
SC-89
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
–20
Gate-Source Voltage
V
GS
6
V
T
A
= 25 C
–390
–370
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 85 C
I
D
–280
–265
Pulsed Drain Current
b
I
DM
–650
mA
Continuous Source Current (diode conduction)
a
I
S
–450
–380
T
A
= 25 C
280
250
Maximum Power Dissipation
a
T
A
= 85 C
P
D
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1023X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET |
| SI1023X-T1 | 功能描述:MOSFET 20V 0.35A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1023X-T1-E3 | 功能描述:MOSFET 20V 0.35A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1023X-T1-GE3 | 功能描述:MOSFET Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si1024-868-A-DK | 功能描述:開發(fā)板和工具包 - 無線 Si1024 868MHz Wireless Dev Kit RoHS:否 制造商:Arduino 產(chǎn)品:Evaluation Boards 工具用于評(píng)估:AT32UC3L 核心:AVR32 頻率: 接口類型:USB 工作電源電壓:5 V |
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