參數(shù)資料
型號(hào): SI1023X
廠(chǎng)商: Vishay Intertechnology,Inc.
元件分類(lèi): MOSFETs
英文描述: Dual P-Channel 20-V (D-S) MOSFET
中文描述: 雙P溝道20 - V(下局副局長(zhǎng))MOSFET的
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 40K
代理商: SI1023X
Si1023X
Vishay Siliconix
New Product
Document Number: 71169
S-03104
Rev. A, 08-Feb-01
www.vishay.com
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
r
D
)
0
20
40
60
80
100
120
0
4
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.8
1.6
2.4
3.2
4.0
0
200
400
600
800
1000
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 10 V
I
D
= 250 mA
I
D
Drain Current (mA)
V
GS
= 4.5 V
I
D
V
GS
= 1.8 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
0
1
2
3
4
5
0
1
2
3
4
5
6
I
D
= 350 mA
1000
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
V
GS
= 4.5 V
I
D
= 200 mA
V
GS
= 2.5 V
V
GS
= 1.8 V
I
D
T
J
= 125 C
T
J
= 25 C
T
J
=
55 C
10
100
I
S
V
= 0 V
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù)
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SI1023X_08 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
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SI1023X-T1-E3 功能描述:MOSFET 20V 0.35A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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