參數(shù)資料
型號(hào): SI1016X
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述: P通道20V(D-S)MOSFET 低閾值
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 53K
代理商: SI1016X
Si1016X
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71168
S-03104
Rev. A, 08-Feb-01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
0
1
2
3
4
5
6
I
D
= 350 mA
1000
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
I
D
= 200 mA
T
J
= 125 C
T
J
= 25 C
T
J
= 50 C
10
100
0.3
0.2
0.1
0.0
0.1
0.2
0.3
50
25
0
25
50
75
100
125
I
D
= 0.25 mA
Threshold Voltage Variance vs. Temperature
V
V
G
T
J
Temperature ( C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
50
25
0
25
50
75
100
125
I
GSS
vs. Temperature
T
J
Temperature ( C)
I
G
0
1
2
3
4
5
6
7
50
25
0
25
50
75
100
125
BV
GSS
vs. Temperature
T
J
Temperature ( C)
B
G
V
GS
= 4.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1016X_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20-V (D-S) MOSFET
SI1016X-T1 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI1016X-T1-GE3 功能描述:MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube