參數(shù)資料
型號(hào)： SI1016X
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET,Low-Threshold
中文描述： P通道20V（D-S）MOSFET 低閾值
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 53K
代理商： SI1016X
Si1016X
Vishay Siliconix
New Product
Document Number: 71168
S-03104—Rev. A, 08-Feb-01
www.vishay.com
1
Complementary N- and P-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(mA)
0.70 @ V
GS
= 4.5 V
0.85 @ V
GS
= 2.5 V
1.25 @ V
GS
= 1.8 V
1.2 @ V
GS
= –4.5 V
1.6 @ V
GS
= –2.5 V
2.7 @ V
GS
= –1.8 V
600
N-Channel
20
500
350
–400
P-Channel
–20
–300
–150
Very Small Footprint
High-Side Switching
Low On-Resistance:
N-Channel, 0.7
P-Channel, 1.2
Low Threshold:
Fast Swtiching Speed: 14 ns
1.8-V Operation
Gate-Source ESD Protection
0.8 V (typ)
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Replace Digital Transistor, Level-Shifter
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Marking Code: A
Top View
3
1
D
2
G
2
S
1
5
2
4
6
D
1
S
2
G
1
SOT-563
SC-89
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
20
–20
Gate-Source Voltage
6
V
T
A
= 25 C
T
A
= 85 C
515
485
–390
–370
Continuous Drain Current
(T
J
= 150 C)
a
I
D
370
350
–280
–265
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
650
–650
mA
450
380
–450
–380
T
A
= 25 C
T
A
= 85 C
280
250
280
250
Maximum Power Dissipation
a
P
D
145
130
145
130
mW
Operating Junction and Storage Temperature Range
T
J
, T
stg
ESD
–55 to 150
C
Gate-Source ESD Rating (HBM, Method 3015)
2000
V
Notes
a.
b.
Surface Mounted on FR4 Board.
Pulse width limited by maximum junction temperature.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI1016X_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20-V (D-S) MOSFET
SI1016X-T1 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI1016X-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI1016X-T1-GE3 功能描述:MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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