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| 型號： | SI1016X |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI1016X |
Si1016X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71168
S-03104
—
Rev. A, 08-Feb-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
V
DS
= V
GS
, I
D
= 250 A
N-Ch
0.45
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
P-Ch
–
0.45
V
N-Ch
0.5
1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5 V
P-Ch
1.0
2.0
A
V
DS
= 16 V, V
GS
= 0 V
N-Ch
0.3
100
V
DS
=
–
16 V, V
GS
= 0 V
P-Ch
–
0.3
–
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
N-Ch
5
V
DS
=
–
16 V, V
GS
= 0 V, T
J
= 85 C
P-Ch
–
5
A
V
DS
= 5 V, V
GS
= 4.5 V
N-Ch
700
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
P-Ch
–
700
mA
V
GS
= 4.5 V, I
D
= 600 mA
N-Ch
0.41
0.70
V
GS
=
–
4.5 V, I
D
=
–
350 mA
P-Ch
0.80
1.2
V
GS
= 2.5 V, I
D
= 500 mA
N-Ch
0.53
0.85
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
300 mA
P-Ch
1.20
1.6
V
GS
= 1.8 V, I
D
= 350 mA
N-Ch
0.70
1.25
V
GS
=
–
1.8 V, I
D
=
–
150 mA
P-Ch
1.80
2.7
V
DS
= 10 V, I
D
= 400 mA
N-Ch
1.0
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
250 mA
P-Ch
0.4
S
I
S
= 150 mA, V
GS
= 0 V
N-Ch
0.8
1.2
Diode Forward Voltage
a
V
SD
I
S
=
–
150 mA, V
GS
= 0 V
P-Ch
–
0.8
–
1.2
V
Dynamic
b
N-Ch
750
Total Gate Charge
Q
g
N-Channel
P-Ch
1500
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 250 mA
N-Ch
75
Gate-Source Charge
Q
gs
P-Channel
P-Ch
150
pC
V
DS
=
–
10 V,
V
GS
=
–
4.5 V, I
D
=
–
250 mA
N-Ch
225
Gate-Drain Charge
Q
gd
P-Ch
450
N-Channel
N-Ch
5
Turn-On Time
t
ON
V
= 10 V, R
= 47
200 mA, V
GEN
= 4.5 V, R
G
= 10
I
D
P-Ch
5
P-Channel
N-Ch
25
ns
Turn-Off Time
t
OFF
V
=
–
10 V, R
= 47
–
200 A, V
GEN
=
–
4.5 V, R
G
= 10
I
D
P-Ch
35
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1016X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Complementary N- and P-Channel 20-V (D-S) MOSFET |
| SI1016X-T1 | 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1016X-T1-E3 | 功能描述:MOSFET 20V 0.6/0.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1016X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI1016X-T1-GE3 | 功能描述:MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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