參數(shù)資料
型號(hào)： S71WS512N80BAEZZ0
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動(dòng)存儲(chǔ)芯片的CMOS 1.8伏特
文件頁數(shù)： 71/142頁
文件大?。?/td> 1996K
代理商： S71WS512N80BAEZZ0
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
71
A d v a n c e I n f o r m a t i o n
array data. If not all selected sectors are protected, the Embedded Erase algo-
rithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is ac-
tively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device en-
ters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alter-
natively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approxi-
mately 1 ms after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.
See the following for additional information:
Figure 6
, "
DQ6: Toggle Bit I
" section,
Figure 25
(toggle bit timing diagram), and
Table 19
.
Toggle Bit I on DQ6 requires either OE# or CE# to be deasserted and reasserted
to show the change in state.
Note:
The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for more information.
Figure 6. Toggle Bit Algorithm
START
No
Yes
Yes
DQ5 = 1
No
Yes
Toggle Bit
= Toggle
No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Toggle Bit
= Toggle
Read Byte Twice
(DQ7–DQ0)
Address = VA
Read Byte
(DQ7–DQ0)
Address =VA
Read Byte
(DQ7–DQ0)
Address =VA
相關(guān)PDF資料
PDF描述
S71WS512N80BAEZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAEZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ0 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ2 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ3 Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71WS512N80BAEZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAEZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
S71WS512N80BAIZZ3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
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