- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365450 > S71WS512N80BAEZZ0 (Spansion Inc.) Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt PDF資料下載
參數(shù)資料
| 型號(hào)： | S71WS512N80BAEZZ0 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和移動(dòng)存儲(chǔ)芯片的CMOS 1.8伏特 |
| 文件頁數(shù)： | 32/142頁 |
| 文件大?。?/td> | 1996K |
| 代理商： | S71WS512N80BAEZZ0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁當(dāng)前第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁
32
S29WSxxxN MirrorBit Flash Family For Multi-chip Products (MCP)
S71WS512NE0BFWZZ_00_ A1 June 28, 2004
A d v a n c e I n f o r m a t i o n
When the parts are first shipped, the PPBs are cleared (erased to “1”) and upon
power up or reset, the DYBs are set or cleared depending upon the ordering op-
tion chosen. If the option to clear the DYBs after power up is chosen, (erased to
“1”), then the sectors may be modified depending upon the PPB state of that sec-
tor. (See
Table 5
) If the option to set the DYBs after power up is chosen
(programmed to “0”), then the sectors would be in the protected state. The PPB
Lock Bit defaults to the cleared state (erased to “1”) after power up and the PPBs
retain their previous state as they are non-volatile. The default DYB state is
cleared (erased to “1”) with the sectors in the unprotected state.
It is possible to have sectors that have been persistently locked, and sectors that
are left in the dynamic state. The sectors in the dynamic state are all unprotected.
If there is a need to protect some of them, a simple DYB Set command sequence
is all that is necessary. The DYB Set or Clear command for the dynamic sectors
signify protected or unprotected state of the sectors respectively. However, if
there is a need to change the status of the persistently locked sectors, a few more
steps are required. First, the PPB Lock Bit must be cleared by either putting the
device through a power-cycle, or hardware reset. The PPBs can then be changed
to reflect the desired settings. Setting the PPB Lock Bit once again will lock the
PPBs, and the device operates normally again.
Note: to achieve the best protection, it’s recommended to execute the PPB Lock
Bit Set command early in the boot code, and protect the boot code by holding
WP# = V
IL
. Note that the PPB and DYB bits have the same function when ACC =
VHH as they do when ACC = V
IH
.
Table 5
contains all possible combinations of the DYB, PPB, and PPB Lock relating
to the status of the sector.
In summary, if the PPB is set (programmed to “0”), and the PPB Lock is set (pro-
grammed to “0”), the sector is protected and the protection can not be removed
until the next power cycle clears (erase to “1”) the PPB Lock Bit. Once the PPB
Lock Bit is cleared (erased to “1”), the sector can be persistently locked or un-
locked. Likewise, if both PPB Lock Bit or PPB is cleared (erased to “1”) the sector
can then be dynamically locked or unlocked. The DYB then controls whether or
not the sector is protected or unprotected.
If the user attempts to program or erase a protected sector, the device ignores
the command and returns to read mode. A program or erase command to a pro-
Table 5. Sector Protection Schemes
DYB
PPB
PPB Lock
Sector State
1
1
1
Sector Unprotected
0
1
1
Sector Protected through DYB
1
0
1
Sector Protected through PPB
0
0
1
Sector Protected through PPB
and DYB
1
1
0
Sector Unprotected
0
1
0
Sector Protected through DYB
1
0
0
Sector Protected through PPB
0
0
0
Sector Protected through PPB
and DYB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S71WS512N80BAEZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAEZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ0 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ2 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ3 | Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S71WS512N80BAEZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAEZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
| S71WS512N80BAIZZ3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。