參數(shù)資料
型號(hào)： S29PL129N65FFIW00
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁(yè)模式閃存
文件頁(yè)數(shù)： 7/85頁(yè)
文件大?。?/td> 940K
代理商： S29PL129N65FFIW00
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
5
P r e l i m i n a r y
Figures
Figure 2.1
Figure 4.1
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Figure 4.3
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Figure 4.5
Figure 4.6
Figure 4.7
Figure 4.8
Figure 7.1
Figure 7.2
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Figure 7.6
Figure 8.1
Figure 8.2
Figure 11.1
Figure 11.2
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Figure 11.5
Figure 11.6
Figure 11.7
Figure 11.8
Figure 11.9
Figure 11.10
Figure 11.11
Figure 11.12
Figure 11.13
Figure 11.14
Figure 11.15
Logic Symbols – PL256N, PL129N, and PL127N .........................................................7
Connection Diagram – 84-ball Fine-Pitch Ball Grid Array (S29PL256N)..........................9
Physical Dimensions – 84-ball Fine-Pitch Ball Grid Array (S29PL256N) ........................ 10
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL127N) ....................... 11
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL129N) ....................... 12
Physical Dimensions – 64-Ball Fine-Pitch Ball Grid Array (S29PL-N) ...........................................13
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL127N, S29PL256N) ............14
Physical Dimensions – 64-Ball Fortified Ball Grid Array (S29PL-N)..............................................15
MCP Look-Ahead Diagram .................................................................................... 16
Single Word Program Operation ............................................................................ 27
Write Buffer Programming Operation ..................................................................... 30
Sector Erase Operation ........................................................................................ 32
Write Operation Status Flowchart .......................................................................... 39
Simultaneous Operation Block Diagram for S29PL256N and S29PL127N ..................... 43
Simultaneous Operation Block Diagram for S29PL129N ............................................ 44
Advanced Sector Protection/Unprotection ............................................................... 48
Lock Register Program Algorithm........................................................................... 52
Maximum Negative Overshoot Waveform ............................................................... 59
Maximum Positive Overshoot Waveform................................................................. 59
Test Setup ......................................................................................................... 60
Input Waveforms and Measurement Levels............................................................. 61
V
CC
Power-Up Diagram ........................................................................................ 61
Read Operation Timings ....................................................................................... 64
Page Read Operation Timings ............................................................................... 65
Reset Timings..................................................................................................... 65
Program Operation Timings .................................................................................. 67
Accelerated Program Timing Diagram .................................................................... 67
Chip/Sector Erase Operation Timings ..................................................................... 68
Back-to-back Read/Write Cycle Timings ................................................................. 68
Data# Polling Timings (During Embedded Algorithms).............................................. 69
Toggle Bit Timings (During Embedded Algorithms)................................................... 69
DQ2 vs. DQ6 ...................................................................................................... 70
相關(guān)PDF資料
PDF描述
S29PL129N65FFIW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL129N65FFIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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