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參數(shù)資料
| 型號(hào)： | S29PL129N65FFIW00 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁(yè)模式閃存 |
| 文件頁(yè)數(shù)： | 47/85頁(yè) |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL129N65FFIW00 |
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November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
45
P r e l i m i n a r y
7.6
Writing Commands/Command Sequences
During a write operation, the system must drive CE# and WE# to V
IL
and OE# to V
IH
when pro-
viding an address, command, and data. Addresses are latched on the last falling edge of WE# or
CE#, while data is latched on the 1st rising edge of WE# or CE#. An erase operation can erase
one sector, multiple sectors, or the entire device.
Table 6.1
and
Table 6.2
indicate the address
space that each sector occupies. The device address space is divided into four banks: Banks B
and C contain only 128 Kword sectors, while Banks A and D contain both 32 Kword boot sectors
in addition to 128 Kword sectors. A
bank address
is the set of address bits required to uniquely
select a bank. Similarly, a
sector address
is the address bits required to uniquely select a sector.
I
CC2
in
DC Characteristics
represents the active current specification for the write mode. see
AC
Characteristics
contains timing specification tables and timing diagrams for write operations.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N65FFIW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFIW03 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N65FFIW02 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFIW03 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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