參數(shù)資料
型號： S29PL129N65FFIW00
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存
文件頁數(shù)： 34/85頁
文件大小： 940K
代理商： S29PL129N65FFIW00
32
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
Notes:
1.
2.
See
Table 12.1
for erase command sequence.
See the section on DQ3 for information on the sector erase timeout.
Figure 7.3 Sector Erase Operation
7.4.4 Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by
Table 12.1
. These commands invoke the
Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all
zero data pattern prior to electrical erase. The system is not required to provide any controls or
timings during these operations. The Command Definition tables (
Table 12.1
and
Table 12.2
)
show the address and data requirements for the chip erase command sequence.
No
No
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Write Additional
Sector Addresses
FFAIL. Write reset command
tto return to reading array.
PPASS. Device returns
tto reading array.
Wait 4
μ
s
PPerform Write Operation
Status Algorithm
Select
Additional
Sectors
Unlock Cycle 1
Unlock Cycle 2
Yes
Yes
Yes
Yes
YYes
Yes
Yes
YYes
No
No
No
No
No
No
No
No
LLast Sector
Selected
Done
DQ5 = 1
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
EError condition (Exceeded Timing Limits)
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
PPoll DQ3.
DQ3 = 1
Each additional cycle must be written within
t
SEA
timeout
Timeout resets after each additional cycle is written
The host system may monitor DQ3 or wait
t
SSEA
tto ensure
aacceptance of erase commands
No limit on number of sectors
Commands other than Erase Suspend or selecting
aadditional sectors for erasure during timeout reset device
tto reading array data
μ
s
SEA
相關(guān)PDF資料
PDF描述
S29PL129N65FFIW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL129N65FFIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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