參數(shù)資料
型號(hào)： S29PL129N65FFIW00
廠商： Spansion Inc.
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫，頁模式閃存
文件頁數(shù)： 65/85頁
文件大小： 940K
代理商： S29PL129N65FFIW00
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
63
P r e l i m i n a r y
11.7.2 DC Characteristics ( V
CC
= 2.7 V to 3.1 V )
( CMOS Compatible)
Notes:
1.
2.
The I
CC
current listed is typically less than 5 mA/MHz, with OE# at V
IH
.
Maximum I
CC
specifications are tested with V
CC
=
V
CC
max, T
A
=
T
A
max. Typical I
CC
specifications are with typical
V
CC
= 2.9 V, T
= + 25°C.
I
CC
active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 1 μA.
Not 100% tested.
Data in table is for V
range 2.7 V to 3.1 V (recommended for MCP applications)
CE1# and CE2# for the PL129N.
3.
4.
5.
6.
7.
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
(
6
)
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
(
6
)
OE# = V
IH
,
V
CC
= V
CC max
(
1
,
6
)
OE# = V
IH
, WE# = V
IL
CE# (
7
), RESET#, WP#/ACC
= V
CC
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V; V
IL
= V
SS
±
0.1 V
± 2
μA
I
LO
Output Leakage Current
± 1
μA
I
CC1
V
CC
Active Read Current (
1
,
2
)
5 MHz
28
40
mA
I
CC2
V
CC
Active Write Current (
2
,
3
)
22
40
mA
I
CC3
V
CC
Standby Current (
2
)
20
40
μA
I
CC4
I
CC5
V
CC
Reset Current (
2
)
Automatic Sleep Mode (
2
,
4
)
300
500
μA
20
40
μA
I
CC6
V
Active Read-While-Write
Current (
1
,
2
)
OE# = V
IH
5 MHz
33
45
mA
I
CC7
V
Active Program-While-Erase-
Suspended Current (
2
,
5
)
OE# = V
IH
24
45
mA
I
CC8
V
CC
Active Page Read Current (
2
)
OE# = V
,
8 word Page Read
40 MHz
6
9
mA
V
IL
V
IH
V
HH
V
OL
V
OH
V
LKO
Input Low Voltage
V
CC
= 2.7 to 3.6 V
V
CC
= 2.7 to 3.6 V
–0.5
0.8
V
Input High Voltage
2.0
V
CC
+ 0.3
9.5
V
Voltage for ACC Program Acceleration V
CC
= 3.0 V ± 10% (
6
)
Output Low Voltage
8.5
V
I
OL
= 100 μA, V
CC
= V
CC min
(
6
)
I
OH
= –100 μA (
6
)
0.1
V
Output High Voltage
V
CC
– 0.2
2.3
V
Low V
CC
Lock-Out Voltage (
5
)
2.5
V
相關(guān)PDF資料
PDF描述
S29PL129N65FFIW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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S29PL129N65FFIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFIW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65FFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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