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參數(shù)資料
| 型號(hào)： | S29PL129N65FFIW00 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| 中文描述： | 256/128/128字節(jié)（16/8/8 M中的x 16位），3.0伏的CMOS只同步讀/寫(xiě)，頁(yè)模式閃存 |
| 文件頁(yè)數(shù)： | 64/85頁(yè) |
| 文件大?。?/td> | 940K |
| 代理商： | S29PL129N65FFIW00 |
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62
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
11.7
DC Characteristics
11.7.1 DC Characteristics ( V
CC
= 2.7 V to 3.6 V )
( CMOS Compatible)
Notes:
1.
2.
The I
current listed is typically less than 5 mA/MHz, with OE# at V
.
Maximum I
CC
specifications are tested with V
CC
=
V
CC
max, T
A
=
T
A
max. Typical I
CC
specifications are with typical
V
CC
= 3.0 V, T
A
= + 25°C.
I
is active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 1 μA.
Not 100% tested.
The data in the table is for V
CC
range 2.7 V to 3.6 V (recommended for standalone applications).
CE1# and CE2# for the PL129N.
3.
4.
5.
6.
7.
Parameter
Symbol
Parameter Description
(Notes)
Test Conditions
Min
(
Note 2
)
Typ
(
Note 2
)
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
(
6
)
V
OUT
= V
SS
to V
CC
, OE# = V
IH
V
CC
= V
CC max
(
6
)
OE# = V
IH
,
V
CC
= V
CC max
(
1
,
6
)
OE# = V
IH
, WE# = V
IL
CE# (
7
), RESET#,
WP#/ACC = V
CC
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V; V
IL
= V
SS
±
0.3 V
± 2.0
μA
I
LO
Output Leakage Current
± 1.0
μA
I
CC1
V
CC
Active Read Current (
1
,
3
)
5 MHz
30
45
mA
I
CC2
V
CC
Active Write Current (
3
)
25
50
mA
I
CC3
V
CC
Standby Current
20
40
μA
I
CC4
I
CC5
V
CC
Reset Current
Automatic Sleep Mode (
4
)
300
500
μA
20
40
μA
I
CC6
V
Active Read-While-Write
Current (
1
)
OE# = V
IH
5 MHz
35
50
mA
I
CC7
V
Active Program-While-Erase-
Suspended Current (
5
)
OE# = V
IH
27
55
mA
I
CC8
V
CC
Active Page Read Current
OE# = V
IH
, 8 word
Page Read
40 MHz
6
10
mA
V
IL
V
IH
Input Low Voltage
V
CC
= 2.7 to 3.6 V
V
CC
= 2.7 to 3.6 V
–0.5
0.8
V
Input High Voltage
2.0
V
CC
+ 0.3
V
V
HH
Voltage for ACC Program
Acceleration
V
CC
= 3.0 V ± 10% (
6
)
8.5
9.5
V
V
OL
V
OH
V
LKO
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC min
(
6
)
I
OH
= –100 μA (
6
)
0.1
V
Output High Voltage
V
CC
– 0.2
2.3
V
Low V
CC
Lock-Out Voltage (
5
)
2.5
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129N65FFIW02 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFIW03 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW000 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW002 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW003 | 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL129N65FFIW02 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFIW03 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW000 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW002 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
| S29PL129N65FFW003 | 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory |
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