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| 型號(hào)： | S29PL127J70 |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 99/106頁(yè) |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL127J70 |
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April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
97
P R E L I M I N A R Y
Physical Dimensions
VBG080—80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J
and PL129J)
3329 \ 16-038.25b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBG 080
JEDEC
N/A
11.00 mm x 8.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.18
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
11.00 BSC.
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
8.80 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
12
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
80
TOTAL BALL COUNT
0.33
---
0.43
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
(A3-A6,B3-B6,L3-L6,M3-M6)
DEPOPULATED SOLDER BALLS
TOP VIEW
INDEX MARK
CORNER
10
PIN A1
C
0.05
(2X)
(2X)
C
0.05
E
D
A
B
A1 CORNER
M
L
J
K
e
7
B
A
C
E
D
F
H
G
8
7
6
5
4
3
2
1
e
D1
E1
SE
7
B
C A
C
M
φ
0.15
φ
0.08 M
6
NX
φ
b
SD
BOTTOM VIEW
SIDE VIEW
A2
A
A1
0.10 C
C
0.08
C
SEATING PLANE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL127J70BAI000 | 功能描述:閃存 128Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL127J70BAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 64FBGA - Trays |
| S29PL127J70BFI000 | 制造商:Spansion 功能描述:SPZS29PL127J70BFI000 POWER MOSFET 30 V, 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 80FBGA - Trays |
| S29PL127J70TAI130 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 56TSOP - Trays |
| S29PL127J70TFI130 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 56TSOP - Trays |
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