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參數(shù)資料
| 型號： | S29PL127J70 |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁數(shù)： | 25/106頁 |
| 文件大小： | 1997K |
| 代理商： | S29PL127J70 |
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April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
23
P R E L I M I N A R Y
Simultaneous Read/Write Operation
In addition to the conventional features (read, program, erase-suspend read, and
erase-suspend program), the device is capable of reading data from one bank of
memory while a program or erase operation is in progress in another bank of
memory (simultaneous operation). The bank can be selected by bank addresses
(PL127J: A22–A20, PL129J and PL064J: A21–A19, PL032J: A20–A18) with zero
latency.
The simultaneous operation can execute multi-function mode in the same bank.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# (CE1# or CE#2 in PL129J) to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facilitate faster programming.
Once a bank enters the Unlock Bypass mode, only two write cycles are required
to program a word, instead of four. The “Word Program Command Sequence”
section has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 4
indicates the set of address space that each sector occupies. A “bank ad-
dress” is the set of address bits required to uniquely select a bank. Similarly, a
“sector address” refers to the address bits required to uniquely select a sector.
The “Command Definitions” section has details on erasing a sector or the entire
chip, or suspending/resuming the erase operation.
Word 6
1
1
0
Word 7
1
1
1
Table 4.
Bank Select
Bank
PL127J: A22–A20
PL064J: A21–A19
PL032J: A20–A18
Bank A
000
Bank B
001, 010, 011
Bank C
100, 101, 110
Bank D
111
Bank
CE1#
CE2#
PL129J: A21–A20
Bank 1A
0
1
00
Bank 1B
0
1
01, 10, 11
Bank 2A
1
0
00, 01, 10
Bank 2B
1
0
11
Table 3.
Page Select
(Continued)
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| S29PL127J70BAI000 | 功能描述:閃存 128Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL127J70BAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 64FBGA - Trays |
| S29PL127J70BFI000 | 制造商:Spansion 功能描述:SPZS29PL127J70BFI000 POWER MOSFET 30 V, 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 80FBGA - Trays |
| S29PL127J70TAI130 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 56TSOP - Trays |
| S29PL127J70TFI130 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 8MX16 70NS 56TSOP - Trays |
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