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參數(shù)資料
| 型號： | S29NS064N0PBJW003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 63/86頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS064N0PBJW003 |
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S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
61
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
13. Absolute Maximum Ratings
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground, All Inputs and I/Os
except ACC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to V
CC
+ 0.5 V
V
CC
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +2.5 V
ACC (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to + 9.5 V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, input at I/Os may undershoot V
SS
to –2.0 V for periods of up to
20 ns. See
Figure 13.1 on page 61
. Maximum DC voltage on input and I/Os is V
CC
+ 0.5 V. During voltage transitions outputs may
overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 13.2 on page 61
.
2. Minimum DC input voltage on
ACC
is –0.5 V. During voltage transitions,
ACC
may undershoot V
SS
to –2.0 V for periods of up to 20 ns.
See
Figure 13.1 on page 61
. Maximum DC input voltage on
ACC
is +9.5 V which may overshoot to +10.5 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
14. Operating Ranges
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–25°C to +85°C
Ambient Temperature (T
A
) during Accelerated Sector Erase . . . . . . . . . . . . . . .+20°C to +40°C
V
CC
Supply Voltages
V
CC
min. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.70 V
V
CC
max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.95 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
Figure 13.1
Maximum Negative Overshoot Waveform
Figure 13.2
Maximum Positive Overshoot Waveform
20 n
s
20 n
s
+0.
8
V
–2.0 V
20 n
s
–0.5 V
20 n
s
20 n
s
V
CC
+2.0 V
V
CC
+0.5 V
20 n
s
1.0 V
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| S29NS064N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS064N0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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