參數(shù)資料
型號(hào)： S29NS064N0PBJW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù)： 49/86頁
文件大?。?/td> 1036K
代理商： S29NS064N0PBJW003
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
47
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
11.10 Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt a embedded programming operation or a
“Write to Buffer” programming operation so that data can read from any non-suspended sector. When the
Program Suspend command is written during a programming process, the device halts the programming
operation within t
PSL
, program suspend latency, and updates the status bits. Addresses are defined when
writing the Program Suspend command.
After the programming operation has been suspended, the system can read array data from any non-
suspended sector. The Program Suspend command may also be issued during a programming operation
while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or
Program Suspend. If a read is needed from the Secured Silicon Sector area (One Time Program area), then
user must use the proper command sequences to enter and exit this region.
The system may also write the autoselect command sequence when the device is in Program Suspend
mode. The device allows reading autoselect codes in the suspended sectors, since the codes are not stored
in the memory array. When the device exits the autoselect mode, the device reverts to Program Suspend
mode, and is ready for another valid operation. See “Autoselect Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don’t care”) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Program Resume command
are ignored. Another Program Suspend command can be written after the device has resume programming.
Note: While a program operation can be suspended and resumed multiple times, a minimum delay of t
PRS
(Program Resume to Program Suspend) is required from resume to the next suspend.
11.11 Lock Register Command Set Definitions
The Lock Register Command Set permits the user to one-time program the Persistent Protection Mode Lock
Bit or Password Protection Mode Lock Bit. The Lock Command Set also allows for the reading of the
Persistent Protection Mode Lock Bit or Password Protection Mode Lock Bit.
The Lock Register Command Set Entry
command sequence must be issued prior to any of the commands
listed following to enable proper command execution.
Note that issuing the
Lock Register Command Set Entry
command disables reads and writes for Bank 0.
Reads from other banks excluding Bank 0 are allowed.
Lock Register Program Command
Lock Register Read Command
Lock Register Exit Command
The
Lock Register Command Set Exit
command
must
be issued after the execution of the commands to
reset the device to read mode, and re-enables reads and writes for Bank 0.
For the device to be permanently set to the Persistent Protection Mode or the Password Protection Mode, the
sequence of a Lock Register Command Set Exit command, must be initiated after issuing the
Persistent
Protection Mode Lock Bit Program
and the
Password Protection Mode Lock Bit Program
commands.
Note that if the
Persistent Protection Mode Lock Bit
and the
Password Protection Mode Lock Bit
are
programmed at the same time, neither will be programmed.
相關(guān)PDF資料
PDF描述
S29NS064N0SBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128N0PBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29NS064N0SBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS128J0LBAW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS128J0LBAW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories
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