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參數(shù)資料
| 型號： | S29NS064N0PBJW003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 48/86頁 |
| 文件大小： | 1036K |
| 代理商： | S29NS064N0PBJW003 |
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46
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.3
Erase Operation
Note
See the section on DQ3 for information on the sector erase start timeout state indicator.
11.9
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read
data from, program data to, any sector not selected for erasure. The system may also lock or unlock any
sector while the erase operation is suspended.
The system must not write the sector lock/unlock
command to sectors selected for erasure.
The bank address is required when writing this command. This
command is valid only during the sector erase operation, including the minimum t
SEA
time-out period during
the sector erase command sequence. The Erase Suspend command is ignored if written during the chip
erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of t
ESL
, erase suspend latency, to suspend the erase operation. However, when the Erase
Suspend command is written during the sector erase time-out, the device immediately terminates the
time-out period and suspends the erase operation.
After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) The system may also lock or unlock any sector while in the erase-suspend-read
mode. Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0.
The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-
suspended. Refer to
Write Operation Status
on page 55
for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode.
The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. Refer to
Write Operation Status
on page 55
for more information.
In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the
Autoselect Functions and Autoselect Command Sequence sections for details.
To resume the sector erase operation, the system must write the Erase Resume command. The bank
address of the erase-suspended bank is required when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Note: While an erase operation can be suspended and resumed multiple times, a minimum delay of t
ERS
(Erase Resume to Erase Suspend) is required from resume to the next suspend.
S
TART
Write Er
as
e
Comm
a
nd
S
e
qu
ence
D
a
t
a
Poll
from
S
y
s
tem
D
a
t
a
= FFh
No
Ye
s
Er
asu
re Completed
Em
b
edded
Er
as
e
a
lgorithm
in progre
ss
相關(guān)PDF資料 |
PDF描述 |
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| S29NS064N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS064N0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS128J0LBAW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS128J0LBAW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Burst Mode Flash Memories |
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