參數(shù)資料
型號： MT48LC8M16A2BB-6ALIT:G
元件分類： DRAM
英文描述： 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝： 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60
文件頁數(shù)： 29/57頁
文件大小： 1506K
35
PDF: 09005aef8091e66d/Source: 09005aef8091e625
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MSDRAM.pmd – Rev. J; Pub. 1/05
2001 Micron Technology, Inc. All rights reserved.
128Mb: x4, x8, x16
SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 36)
PARAMETER
SYMBOL
-6A
-7E
-75
UNITS NOTES
READ/WRITE command to READ/WRITE command
tCCD
1
tCK
17
CKE to clock disable or power-down entry mode
tCKED
1
tCK
14
CKE to clock enable or power-down exit setup mode
tPED
1
tCK
14
DQM to input data delay
tDQD
0
tCK
17
DQM to data mask during WRITEs
tDQM
0
tCK
17
DQM to data high-impedance during READs
tDQZ
2
tCK
17
WRITE command to input data delay
tDWD
0
tCK
17
Data-in to ACTIVE command
tDAL
5
4
5
tCK
15, 21
Data-in to PRECHARGE command
tDPL
2
tCK
16, 21
Last data-in to burst STOP command
tBDL
1
tCK
17
Last data-in to new READ/WRITE command
tCDL
1
tCK
17
Last data-in to PRECHARGE command
tRDL
2
tCK
16, 21
LOAD MODE REGISTER command to ACTIVE or REFRESH command
tMRD
2
tCK
26
Data-out to high-impedance from PRECHARGE command
CL = 3
tROH(3)
3
tCK
17
CL = 2
tROH(2)
-
2
tCK
17
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