參數(shù)資料
型號(hào): MT48LC4M16A2P-75:G
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 49/72頁(yè)
文件大小: 3455K
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM_2.fm - Rev. N 12/08 EN
53
2000 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16 SDRAM
Timing Diagrams
Figure 36:
Power-Down Mode
Notes:
1. Violating refresh requirements during power-down may result in a loss of data.
tCH
tCL
tCK
Two clock cycles
CKE
CLK
DQ
All banks idle, enter
power-down mode
Precharge all
active banks
Input buffers gated off while in
power-down mode
Exit power-down mode
(
)
(
)
(
)
(
)
DON’T CARE
tCKS
COMMAND
tCMH
tCMS
PRECHARGE
NOP
ACTIVE
NOP
(
)
(
)
(
)
(
)
All banks idle
BA0, BA1
BANK
BANK(S)
(
)
(
)
(
)
(
)
High-Z
tAH
tAS
tCKH
tCKS
DQM /
DQML, DQMH
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
A0–A9, A11
ROW
(
)
(
)
(
)
(
)
ALL BANKS
SINGLE BANK
A10
ROW
(
)
(
)
(
)
(
)
T0
T1
T2
Tn + 1
Tn + 2
相關(guān)PDF資料
PDF描述
M93C06-MB6G 16 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
MT48LC4M16A2F4-6IT:G 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA54
MT46V32M8FG-6TIT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60
MT46V32M8BG-6AT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60
M29F800FB55N3E2 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48LC4M16A2P75ITG 制造商:Micron Technology Inc 功能描述:
MT48LC4M16A2P-75ITG 制造商: 功能描述:
MT48LC4M16A2P-7E 制造商:Micron Technology Inc 功能描述:SDRAM 64MBIT 133MHZ 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP, Memory Type:DRAM - Synchronous, Memory Configurat