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參數(shù)資料
| 型號： | MT48LC4M16A2P-75:G |
| 元件分類： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 13/72頁 |
| 文件大?。?/td> | 3455K |
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PDF: 09005aef80725c0b/Source: 09005aef806fc13c
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM_2.fm - Rev. N 12/08 EN
20
2000 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16 SDRAM
Commands
A precharge of the bank/row that is addressed with the READ or WRITE command is
automatically performed upon completion of the READ or WRITE burst, except in the
full-page burst mode, where auto precharge does not apply. Auto precharge is nonper-
sistent in that it is either enabled or disabled for each individual READ or WRITE
command.
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. The user must not issue another command to the same bank until the precharge
time (tRP) is completed. This is determined as if an explicit PRECHARGE command was
issued at the earliest possible time, as described for each burst type in “Operation” on
BURST TERMINATE
The BURST TERMINATE command is used to truncate either fixed-length or full-page
bursts. The most recently registered READ or WRITE command prior to the BURST
TERMINATE command will be truncated, as shown in the Operation section of this data
sheet. The BURST TERMINATE command does not precharge the row; the row will
remain open until a PRECHARGE command is issued.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the SDRAM and is analogous to
CAS#-BEFORE-RAS# (CBR) refresh in conventional DRAMs. This command is nonper-
sistent, so it must be issued each time a refresh is required. All active banks must be
PRECHARGED prior to issuing an AUTO REFRESH command. The AUTO REFRESH
command should not be issued until the minimum tRP has been met after the
PRECHARGE command as shown in the Operation section.
The addressing is generated by the internal refresh controller. This makes the address
bits “Don’t Care” during an AUTO REFRESH command. Regardless of device width, the
64Mb SDRAM requires 4,096 AUTO REFRESH cycles every 64ms (commercial and indus-
trial) or 16ms (automotive). Providing a distributed AUTO REFRESH command every
15.625s (commercial and industrial) or 3.906s (automotive) will meet the refresh
requirement and ensure that each row is refreshed. Alternatively, 4,096 AUTO REFRESH
commands can be issued in a burst at the minimum cycle rate (tRFC), once every 64ms
(commercial and industrial) or 16ms (automotive).
SELF REFRESH
The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest
of the system is powered down. When in the self refresh mode, the SDRAM retains data
without external clocking.
The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE
is disabled (LOW). After the SELF REFRESH command is registered, all the inputs to the
SDRAM become “Don’t Care,” with the exception of CKE, which must remain LOW.
After self refresh mode is engaged, the SDRAM provides its own internal clocking,
causing it to perform its own AUTO REFRESH cycles. The SDRAM must remain in self
refresh mode for a minimum period equal to tRAS and may remain in self refresh mode
for an indefinite period beyond that.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT48LC4M16A2P75ITG | 制造商:Micron Technology Inc 功能描述: |
| MT48LC4M16A2P-75ITG | 制造商: 功能描述: |
| MT48LC4M16A2P-7E | 制造商:Micron Technology Inc 功能描述:SDRAM 64MBIT 133MHZ 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP 制造商:Micron Technology Inc 功能描述:SDRAM, 64MBIT, 133MHZ, 54TSOP, Memory Type:DRAM - Synchronous, Memory Configurat |
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