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參數(shù)資料
| 型號： | MT28F640J3 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 64Mb Flash Memory(64Mb閃速存儲器) |
| 中文描述： | 64MB Flash記憶體（64兆閃速存儲器） |
| 文件頁數(shù)： | 10/45頁 |
| 文件大?。?/td> | 317K |
| 代理商： | MT28F640J3 |
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64Mb, 32Mb SirusFlash Memory
MT28F640J3_2.p65 – Rev. 1, Pub. 12/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
64Mb, 32Mb
SIRUSFLASH MEMORY
PRELIMINARY
Table 4
Summary of Query Structure Output as a Function of Device and Mode
DEVICE
TY PE/
MODE
QUERY START LOCATION IN
MAXIMUM DEVICE BUS
WIDTH ADDRESSES
QUERY DATA WITH
MAXIMUM DEVICE BUS
WIDTH ADDRESSING
HEX
HEX
OFFSET
CODE
10
0051
11
0052
12
0059
QUERY DATA WITH BYTE
A DDRESSING
A SCII
VA LUE
Q
R
Y
HEX
OFFSET
20
21
22
20
21
22
HEX
CODE
51
00
52
51
51
52
A SCII
VA LUE
Q
Null
R
Q
Q
R
x16 device
x16 mode
10h
x16 device
x8 mode
N/A
1
N/A
1
READ ARRAY COMMAND
The device defaults to read array mode upon initial
device power-up and after exiting reset/power-down
mode. The read configuration register defaults to asyn-
chronous read page mode. Until another command is
written, the READ ARRAY command also causes the
device to enter read array mode. When the ISM has
started a block erase, program, or lock bit configura-
tion, the device does not recognize the READ ARRAY
command until the ISM completes its operation, un-
less the ISM is suspended via an ERASE or PROGRAM
SUSPEND command. The READ ARRAY command
functions independently of the V
PEN
voltage.
READ QUERY MODE COMMAND
This section is related to the definition of the data
structure or “data base” returned by the CFI QUERY
command. System software should retain this struc-
ture to gain critical information such as block size, den-
sity, x8/x16, and electrical specifications. When this
information has been obtained, the software knows
which command sets to use to enable Flash writes or
block erases, and otherwise control the Flash compo-
nent.
QUERY STRUCTURE OUTPUT
The query “data base” enables system software to
obtain information about controlling the Flash compo-
nent. The device’s CFI-compliant interface allows the
host system to access query data. Query data are al-
ways located on the lowest-order data outputs (DQ0–
DQ7) only. The numerical offset value is the address
relative to the maximum bus width supported by the
device. On this family of devices, the query table de-
vice starting address is a 10h, which is a word address
for x16 devices.
For a x16 organization, the first two bytes of the
query structure, “Q” and “R” in ASCII, appear on the
low byte at word addresses 10h and 11h. This CFI-
compliant device outputs 00h data on upper bytes,
thus making the device output ASCII “Q” on the LOW
byte (DQ0–DQ7) and 00h on the HIGH byte (DQ8–
DQ15). At query addresses containing two or more bytes
of information, the least significant data byte is located
at the lower address, and the most significant data
byte is located at the higher address. This is summa-
rized in Table 4. A more detailed example is provided in
Table 5.
NOTE:
1. The system must drive the lowest-order addresses to access all the device’s array data when the device is configured in
x8 mode. Therefore, word addressing where these lower addresses are not toggled by the system is “ Not Applicable”
for x8-configured devices.
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| MT28F640J3BS-115 ET | 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT28F640J3BS-115 ET TR | 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| MT28F640J3BS-115 GMET | 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT28F640J3BS-115 GMET TR | 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應商設備封裝:48-CBGA（7x7） 包裝:托盤 |
| MT28F640J3BS-115 MET | 功能描述:IC FLASH 64MBIT 115NS 64FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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