參數(shù)資料
型號(hào): MT28F016S5VG-9
廠商: Micron Technology, Inc.
英文描述: 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
中文描述: 2邁可× 8的SMART 5偶扇區(qū)快閃記憶體
文件頁數(shù): 9/24頁
文件大小: 282K
代理商: MT28F016S5VG-9
9
2 Meg x 8 Smart 5 Even-Sectored Flash Memory
F42.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
Table 2
Status Register
STATUS
BIT #
SR7
STATUS REGISTER BIT
ISM STATUS
1 = Ready
0 = Busy
DESCRIPTION
The ISMS bit displays the active status of the state machine
during WRITE or BLOCK ERASE operations. The controlling
logic polls this bit to determine when the erase and write
status bits are valid.
Issuing an ERASE SUSPEND places the ISM in the suspend
mode and sets this and the ISMS bit to “1.” The ESS bit will
remain “1” until an ERASE CONFIRM is issued.
ES is set to “1” after the maximum number of ERASE cycles is
executed by the ISM without a successful verify. ES is only
cleared by a CLEAR STATUS REGISTER command or by a
RESET.
WS is set to “1” after the maximum number of WRITE cycles
is executed by the ISM without a successful verify. WS is only
cleared by a CLEAR STATUS REGISTER command or by a
RESET.
V
PP
S detects the presence of a V
PP
voltage. It does not
monitor V
PP
continuously, nor does it indicate a valid V
PP
voltage. The V
PP
pin is sampled for 5V after WRITE or ERASE
CONFIRM is given. V
PP
S must be cleared by CLEAR STATUS
REGISTER or by a RESET.
Reserved for future use.
SR6
ERASE SUSPEND STATUS
1 = ERASE suspended
0 = ERASE in progress/completed
ERASE STATUS
1 = BLOCK ERASE error
0 = Successful BLOCK ERASE
SR5
SR4
WRITE STATUS
1 = WRITE error
0 = Successful WRITE
SR3
V
PP
STATUS
1 = No V
PP
voltage detected
0 = V
PP
present
SR0-2
RESERVED
Table 3
Device Configuration
DEVICE CONFIGURATION
Manufacturer Compatibility ID
Device ID
ADDRESS
000000H
000001H
DATA
89H
A0H
CONDITION
Manufacturer compatibility ID read
Device ID read
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