參數(shù)資料
型號(hào)： MT28F016S5VG-9
廠商： Micron Technology, Inc.
英文描述： 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY
中文描述： 2邁可× 8的SMART 5偶扇區(qū)快閃記憶體
文件頁(yè)數(shù)： 1/24頁(yè)
文件大?。?/td> 282K
代理商： MT28F016S5VG-9
1
2 Meg x 8 Smart 5 Even-Sectored Flash Memory
F42.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
ADVANCE
2 MEG x 8
SMART 5 EVEN-SECTORED FLASH MEMORY
FLASH MEMORY
PIN ASSIGNMENT (Top View)
FEATURES
Thirty-two 64KB erase blocks
Deep Power-Down Mode:
10μA MAX
Smart 5 technology:
5V ±10% V
CC
5V ±10% V
PP
application/production
programming
12V V
PP
tolerant compatibility production
programming
Address access time: 90ns
Industry-standard pinouts
Inputs and outputs are fully TTL-compatible
Automated write and erase algorithm
Two-cycle WRITE/ERASE sequence
OPTIONS
Timing
90ns access
MARKING
-9
Package
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
Part Number Example:
MT28F016S5VG-9
MT28F016S5
5V Only, Dual Supply (Smart 5)
40-Pin TSOP Type I
A19
A18
A17
A16
A15
A14
A13
A12
CE#
V
CC
V
PP
RP#
A11
A10
A9
A8
A7
A6
A5
A4
A20
NC
WE#
OE#
RY/BY#
DQ7
DQ6
DQ5
DQ4
V
CC
V
SS
V
SS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
GENERAL DESCRIPTION
The MT28F016S5 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 2,097,152 bytes (8 bits). Writing or erasing the
device is done with a 5V V
PP
voltage, while all opera-
tions are performed with a 5V V
CC
. Due to process
technology advances, 5V V
PP
is optimal for application
and production programming. For backward compat-
ibility with SmartVoltage technology, 12V V
PP
is sup-
ported for a maximum of 100 cycles and may be
connected for up to 100 cumulative hours. The device
is fabricated with Micron’s advanced CMOS floating-
gate process.
The MT28F016S5 is organized into 32 separately
erasable blocks. ERASEs may be interrupted to allow
other operations with the ERASE SUSPEND command.
After the ERASE SUSPEND command is issued, READ
operations may be executed.
Operations are executed with commands from an
industry-standard command set. In addition to status
register polling, the MT28F016S5 provides a ready/
busy# (RY/BY#) output to indicate WRITE and ERASE
Please refer to Micron’s Web site (www.micron.com/
相關(guān)PDF資料
PDF描述
MT28F160S3 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲(chǔ)器)
MT28F640J3 64Mb Flash Memory(64Mb閃速存儲(chǔ)器)
MT35212A BELL 212A/CCITT V.22 Modem Filter
MT35212AE BELL 212A/CCITT V.22 Modem Filter
MT35212AP BELL 212A/CCITT V.22 Modem Filter
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT28F1284W18 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:1.8V Low Voltage, Extended Temperature
MT28F128J3 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:Q-FLASHTM MEMORY
MT28F128J3BS-12 ET 功能描述:IC FLASH 128MBIT 120NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869
MT28F128J3BS-12 ET TR 功能描述:IC FLASH 128MBIT 120NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤(pán)
MT28F128J3BS-12 MET 功能描述:IC FLASH 128MBIT 120NS 64FBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤(pán) 其它名稱(chēng):Q2841869
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。