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參數(shù)資料
| 型號(hào)： | MT18VDVF6472DG-265XX |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁數(shù)： | 4/38頁 |
| 文件大?。?/td> | 713K |
| 代理商： | MT18VDVF6472DG-265XX |
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PDF: 09005aef81c73825/Source: 09005aef81c73837
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C64_128x72D_2.fm - Rev. A 8/05 EN
12
2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
Mode Register Definition
Read Latency
The READ latency is the delay, in clock cycles, between the registration of a READ com-
mand and the availability of the first bit of output data. The latency can be set to 2 or 2.5
clocks, as shown in Figure 5, "CAS Latency Diagram," on page 14.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available nominally coincident with clock edge n + m. Figure 6, "CAS Latency
Table," on page 13, indicates the operating frequencies at which each CAS latency set-
ting can be used.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
Figure 4:
Mode Register Definition Diagram
M3 = 0
Reserved
2
4
8
Reserved
M3 = 1
Reserved
2
4
8
Reserved
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
0
1
-
0
-
0
-
0
-
0
-
0
-
Valid
-
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
2
Reserved
2.5
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency BT
0*
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Mode Register (Mx)
Address Bus
9
7
65
4
3
8
2
1
0
M1
0
1
0
1
M2
0
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
1
0
1
M6
0
1
M6-M0
M8 M7
Operating Mode
A10
A12 A11
BA0
BA1
10
11
12
13
0*
14
* M14 and M13 (BA1 and BA0)
must be “0, 0” to select the
base mode register (vs. the
extended mode register).
M9
M10
M12 M11
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