參數(shù)資料
型號： MMDF2C02E
廠商： ON SEMICONDUCTOR
英文描述： Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應管（N溝道+P溝道）)
中文描述： 雙功率MOSFET2.5安培，25伏（包2.5a，25V的，雙功率馬鞍山場效應管（不適用溝道P溝道））
文件頁數(shù)： 2/12頁
文件大?。?/td> 140K
代理商： MMDF2C02E
MMDF2C02E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Note 1.)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS
(Note 3.)
V(BR)DSS
–
25
–
–
Vdc
IDSS
(N)
(P)
–
–
–
–
1.0
1.0
μ
Adc
IGSS
–
–
–
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
On–State Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(th)
–
1.0
2.0
3.0
Vdc
RDS(on)
(N)
(P)
–
–
–
–
0.100
0.250
Ohm
RDS(on)
(N)
(P)
–
–
–
–
0.200
0.400
Ohm
ID(on)
(N)
(P)
2.0
2.0
–
–
–
–
Adc
gFS
(N)
(P)
1.0
1.0
2.6
2.8
–
–
mhos
Ciss
(N)
(P)
–
–
380
340
532
475
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
f 1.0 MHz)
Coss
(N)
(P)
–
–
235
220
329
300
Transfer Capacitance
Crss
(N)
(P)
–
–
55
75
110
150
SWITCHING CHARACTERISTICS
(Note 4.)
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1
)
td(on)
(N)
(P)
–
–
10
20
30
40
ns
Rise Time
tr
(N)
(P)
–
–
35
40
70
80
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 5.0 Vdc,
RG = 25
)
td(off)
(N)
(P)
–
–
19
53
38
106
Fall Time
tf
(N)
(P)
–
–
25
41
50
82
Turn–On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0
)
td(on)
(N)
(P)
–
–
7.0
13
21
26
Rise Time
tr
(N)
(P)
–
–
17
29
30
58
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0
)
td(off)
(N)
(P)
–
–
27
30
48
60
Fall Time
tf
(N)
(P)
–
–
18
28
30
56
1. Negative signs for P–Channel device omitted for clarity.
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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