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參數(shù)資料
| 型號(hào)： | MMDF2C02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Power MOSFET 2.5 Amps, 25 Volts(2.5A，25V，雙功率MOS場效應(yīng)管（N溝道+P溝道）) |
| 中文描述： | 雙功率MOSFET2.5安培，25伏（包2.5a，25V的，雙功率馬鞍山場效應(yīng)管（不適用溝道P溝道）） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MMDF2C02E |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 6
1
Publication Order Number:
MMDF2C02E/D
MMDF2C02E
Advance Information
Power MOSFET
2.5 Amps, 25 Volts
Complementary SO–8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a low reverse recovery time. MiniMOS
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc–dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted) (Note 1.)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current
– Continuous N–Channel
P–Channel
– Pulsed
N–Channel
P–Channel
Operating and Storage Temperature Range
Symbol
VDSS
VGS
ID
Value
25
±
20
3.6
2.5
18
13
– 55
to 150
Unit
Vdc
Vdc
Adc
IDM
TJ and
Tstg
PD
EAS
°
C
Total Power Dissipation @ TA= 25
°
C (Note 2.)
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A, L
= 6.0 mH, RG = 25
)
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A, L
= 10 mH, RG = 25
)
Thermal Resistance – Junction to Ambient
(Note 2.)
2.0
Watts
mJ
N–Channel
P–Channel
245
245
R
θ
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering,
0.0625
″
from case. Time in Solder Bath is
10 seconds.
1. Negative signs for P–Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
TL
260
°
C
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
N–Drain
P–Drain
P–Drain
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C02ER2
SO–8
2500 Tape & Reel
http://onsemi.com
D
S
G
P–Channel
D
S
G
N–Channel
SO–8, Dual
CASE 751
STYLE 14
LYWW
MARKING
DIAGRAM
F2C02
L
Y
WW
= Location Code
= Year
= Work Week
PIN ASSIGNMENT
1
8
2.5 AMPERES
25 VOLTS
RDS(on) = 100 m (N–Channel)
RDS(on) = 250 m (P–Channel)
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| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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