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參數(shù)資料
| 型號： | MMDF2C03HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2 Amps, 30 Volts Complementary SO8, Dual(2A,30V,SO-8,N/P溝道功率雙MOSFET) |
| 中文描述： | 功率MOSFET 2安培，30伏特互補SO8封裝，雙（第2A，30V的，蘇- 8，N / P系列溝道功率雙MOSFET的） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MMDF2C03HD |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 7
1
Publication Order Number:
MMDF2C03HD/D
MMDF2C03HD
Preferred Device
Power MOSFET
2 Amps, 30 Volts
Complementary SO8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Features
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO-8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO-8 Package Provided
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
30
±
20
4.1
3.0
21
15
Vdc
GatetoSource Voltage
Vdc
Drain Current Continuous
NChannel
PChannel
NChannel
PChannel
Drain Current
Pulsed
I
DM
A
Operating and Storage Temperature Range
T
J
, T
stg
P
D
R
JA
55 to 150
°
C
W
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Thermal Resistance, JunctiontoAmbient
(Note 2)
2.0
62.5
°
C/W
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 30 V, V
GS
= 5.0 V, Peak I
L
= 9.0 Apk,
L = 8.0 mH, R
G
= 25 )
(V
= 30 V, V
GS
= 5.0 V, Peak I
L
= 6.0 Apk,
L = 18 mH, R
G
= 25 )
Max Lead Temperature for Soldering, 0.0625
″
from case. Time in Solder Bath is 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Negative signs for PChannel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
one die operating, 10 sec. max.
NChannel
PChannel
E
AS
324
324
mJ
T
L
260
°
C
NSource
1
2
3
4
8
7
6
5
NGate
PSource
PGate
NDrain
NDrain
PDrain
PDrain
Device
Package
Shipping
ORDERING INFORMATION
MMDF2C03HDR2
SO8
2500 Tape & Reel
NChannel
D
S
G
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
D
S
G
PChannel
2 AMPERES, 30 VOLTS
R
DS(on)
= 70 m (N-Channel)
R
DS(on)
= 200 m (P-Channel)
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMDF2C03HDR2G
SO8
(PbFree)
2500 Tape & Reel
SO8
CASE 751
STYLE 14
MARKING
DIAGRAM
D2C03 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
D2C03
AYWW
1
8
1
8
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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