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參數(shù)資料
| 型號： | MMDF3N04HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 3 Amps, 40 Volts |
| 中文描述： | 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-07, SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 135K |
| 代理商： | MMDF3N04HDR2 |
Semiconductor Components Industries, LLC, 2003
October, 2003 Rev. 3
1
Publication Order Number:
MMDF3N04HD/D
MMDF3N04HD
Preferred Device
Power MOSFET
3 Amps, 40 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and
true logic level performance. They are capable of withstanding high energy
in the avalanche and commutation modes and the draintosource diode
has a very low reverse recovery time. MiniMOS
devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dcdc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk drives
and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
Avalanche Energy Specified
NChannel
D
S
G
Source1
1
2
3
4
8
7
6
5
Top View
Gate1
Source2
Gate2
Drain1
Drain1
Drain2
Drain2
1
8
Device
Package
Shipping
ORDERING INFORMATION
MMDF3N04HDR2
SO8
2500 Tape & Reel
SO8, Dual
CASE 751
Style 11
ALYW
MARKING
DIAGRAM
D3N04H
D3N04H= Specific Device Code
A
= Assembly Location
L
=Wafer Lot
Y
= Year
W
= Work Week
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
40 V
80 m @ TBD
R
DS(on)
TYP
3.0 A
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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| MMFT2955E | Power MOSFET 1 Amp, 60 Volts P-Channel(1A，60V，P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
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