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參數(shù)資料
| 型號(hào)： | MMFT2N02EL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2 Amps, 20 Volts N-Channel(2A，20V，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 功率MOSFET 2安培，20伏特N溝道（第2A，20V的，?溝道增強(qiáng)型功率馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | MMFT2N02EL |
Publication Order Number:
MMFT2N02EL/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
N–Channel SOT–223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dc–dc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT–223 package which is
designed for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic Level
ICs, VGS(th) = 2 Volts Max
The SOT–223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
20
Vdc
Gate–to–Source Voltage – Continuous
±
15
Drain Current – Continuous
Drain Current
– Pulsed
ID
IDM
1.6
6.4
Adc
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
(Note 1.)
0.8
6.4
Watts
mW/
°
C
Operating and Storage Temperature
Range
TJ, Tstg
–65 to
150
°
C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 10 V, VGS = 5 V, Peak
IL= 2 A, L = 0.2 mH, RG = 25
)
THERMAL CHARACTERISTICS
EAS
66
mJ
Thermal Resistance –
Junction–to–Ambient (surface mounted)
R
θ
JA
156
°
C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
TL
260
10
°
C
Sec
1. Power rating when mounted on FR–4 glass epoxy printed circuit board using
recommended footprint.
2 AMPERES
20 VOLTS
RDS(on) = 150 m
D
G
S
1
2
3
4
N–Channel
Device
Package
Shipping
ORDERING INFORMATION
MMFT2N02ELT1
SOT–223
1000 Tape & Reel
TO–261AA
CASE 318E
STYLE 3
http://onsemi.com
LWW
MARKING
DIAGRAM
2N02L
L
WW
= Location Code
= Work Week
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
3
Source
2
1
4
Gate
Drain
Drain
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
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