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參數(shù)資料
| 型號(hào)： | MMDF3N04HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N溝道功率雙MOSFET) |
| 中文描述： | 功率MOSFET 3安培，40伏特?頻道SO8封裝，雙條第（3A，40V的，SO - 8封裝，?溝道功率雙MOSFET的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 99K |
| 代理商： | MMDF3N04HD |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 4
1
Publication Order Number:
MMDF3N04HD/D
MMDF3N04HD
Preferred Device
Power MOSFET
3 Amps, 40 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOS devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Features
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
Avalanche Energy Specified
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage Continuous
Drain Current
Continuous @ T
A
= 25
°
C (Note 1)
Continuous @ T
= 70
°
C (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation @ T
= 25
°
C (Note 1)
Linear Derating Factor (1)
Total Power Dissipation @ T
= 25
°
C (Note 2)
Linear Derating Factor (2)
Symbol
V
DSS
V
DGR
V
GS
Value
40
40
±
20
Unit
Vdc
Vdc
Vdc
I
D
I
D
I
DM
P
D
3.4
3.0
40
2.0
16
Adc
Apk
W
mW/
°
C
W
mW/
°
C
°
C
mJ
P
D
1.39
11.11
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C (V
= 25 Vdc,
V
= 10 Vdc, Peak I
= 9.0 Apk,
L = 4.0 mH, V
DS
= 40 Vdc)
THERMAL CHARACTERISTICS
T
J
, T
stg
E
AS
55 to 150
162
Rating
Symbol
Typ
Max
Unit
°
C/W
Thermal Resistance, (PCB Mount)
JunctiontoAmbient, (Note 1)
JunctiontoAmbient, (Note 2)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When mounted on 1
″
square FR4 or G10 board (V
= 10 V, @ 10 Secs)
2. When mounted on minimum recommended FR4 or G10 board (V
GS
= 10 V,
@ Steady State)
3. Repetitive rating; pulse width limited by maximum junction temperature.
R
JA
R
JA
62.5
90
Source1
1
2
3
4
8
7
6
5
Gate1
Source2
Gate2
Drain1
Drain1
Drain2
Drain2
Device
Package
Shipping
ORDERING INFORMATION
MMDF3N04HDR2
MMDF3N04HDR2G
SO8
SO8
(PbFree)
2500 Tape & Reel
2500 Tape & Reel
PIN ASSIGNMENT
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
40 V
80 m @ TBD
R
DS(on)
TYP
3.0 A
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NChannel
D
S
G
SO8
CASE 751
STYLE 11
MARKING
DIAGRAM
D3N04H = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
D3N04H
AYWW
1
8
1
8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
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