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參數(shù)資料
| 型號(hào)： | MMDF3N04HD |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N溝道功率雙MOSFET) |
| 中文描述： | 功率MOSFET 3安培，40伏特?頻道SO8封裝，雙條第（3A，40V的，SO - 8封裝，?溝道功率雙MOSFET的） |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | MMDF3N04HD |
MMDF3N04HD
http://onsemi.com
5
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
Q
g
, TOTAL GATE CHARGE (nC)
0
4
8
I
D
= 3.4 A
T
J
= 25
°
C
V
GS
9
3
0
12
30
10
0
V
DS
QT
Q1
Q2
Q3
12
16
V
6
20
t
R
G
, GATE RESISTANCE (OHMS)
1000
1
100
10
1
V
DD
= 20 V
I
D
= 3.4 A
V
GS
= 10 V
T
J
= 25
°
C
t
d(on)
t
r
100
10
t
d(off)
t
f
40
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, t
rr
, due
to the storage of minority carrier charge, Q
RR
, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short t
rr
and low Q
RR
specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during t
a
is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during t
b
is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of t
b
/t
a
serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter t
rr
), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
Figure 10. Diode Forward Voltage versus Current
I
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
1.0
1.5
2.0
3.0
2.5
0.5
0.55
0
0.5
T
J
= 25
°
C
V
GS
= 0 V
0.6
0.65
0.7
0.75
0.8
0.85
3.5
0.9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N04HDR2 | 功能描述:MOSFET 40V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
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