參數(shù)資料
型號(hào)： MMDF3N04HDR2
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Power MOSFET 3 Amps, 40 Volts
中文描述： 3400 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： MINIATURE, CASE 751-07, SO-8
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 135K
代理商： MMDF3N04HDR2
MMDF3N04HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(Notes 4 & 6)
V
(BR)DSS
40
4.3
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
(V
DS
= 40 Vdc, V
GS
= 0 Vdc, T
J
= 125
°
C)
I
DSS
0.015
0.15
2.5
10
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
0.013
500
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(Notes 4 & 6)
V
GS(th)
1.0
2.0
4.9
3.0
Vdc
mV/
°
C
Static DraintoSource OnResistance
(V
GS
= 10 Vdc, I
D
= 3.4 Adc)
(V
GS
= 4.5 Vdc, I
D
= 1.7 Adc)
(Cpk
≥
2.0)
(Notes 4 & 6)
R
DS(on)
55
79
80
100
m
Forward Transconductance (V
DS
= 3.0 Vdc, I
D
= 1.7 Adc)
(Note 4)
g
FS
2.0
4.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 32 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
450
900
pF
Output Capacitance
C
oss
130
230
Transfer Capacitance
C
rss
32
96
SWITCHING CHARACTERISTICS
(Note 5)
TurnOn Delay Time
t
d(on)
9.0
18
ns
Rise Time
= 20
= 3.4 Adc,
(V
DD
20
Vdc, I
D
3.4 Adc,
V
GS
= 10 Vdc, R
G
= 6 ) (Note 4)
t
r
15
30
TurnOff Delay Time
t
d(off)
28
56
Fall Time
t
f
19
38
TurnOn Delay Time
t
d(on)
13
26
ns
Rise Time
= 20
= 1.7 Adc,
(V
DD
20
Vdc, I
D
1.7 Adc,
V
GS
= 4.5 Vdc, R
G
= 6 ) (Note 4)
t
r
77
144
TurnOff Delay Time
t
d(off)
17
34
Fall Time
t
f
20
40
Gate Charge
Q
T
13.9
28
nC
= 40 Vdc, I
= 3.4 Adc,
(V
DS
40 Vdc, I
D
3.4 Adc,
V
GS
= 10 Vdc) (Note 4)
Q
1
2.1
Q
2
3.7
Q
3
5.4
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 3.4 Adc, V
GS
= 0 Vdc) (Note 4)
(I
S
= 3.4 Adc, V
GS
= 0 Vdc,
T
J
= 125
°
C)
V
SD
0.87
0.8
1.5
Vdc
Reverse Recovery Time
(I
S
= 3.4 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 4)
3 4 Ad
t
rr
27
ns
t
a
20
t
b
7.0
Reverse Recovery Storage Charge
4. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values. C
pk
=
3 x SIGMA
Q
RR
0.03
C
Max limit Typ
相關(guān)PDF資料
PDF描述
MMDF3N04HD Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N溝道功率雙MOSFET)
MMDL914T1 High Speed Switching Diode(高速開(kāi)關(guān)二極管)
MMFT2955E Power MOSFET 1 Amp, 60 Volts P-Channel(1A，60V，P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
MMFT2N02EL Power MOSFET 2 Amps, 20 Volts N-Channel(2A，20V，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
MMJT9410 Bipolar Power Transistors NPN Silicon(NPN型雙極性功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF3N04HDR2G 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF3N06HD 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS
MMDF3N06VL 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual
MMDF3N06VLR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R
MMDF3NO2HD 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*